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| geometry process details principal device type cmkt5087 gross die per 5 inch wafer 91,469 process CP788X small signal transistor pnp - low noise amplifier transistor chip process epitaxial planar die size 13.7 x 13.7 mils die thickness 5.9 mils base bonding pad area 4.0 x 4.0 mils emitter bonding pad area 5.5 x 5.5 mils top side metalization al-si - 30,000? back side metalization au - 12,000? backside collector r0 www.centralsemi.com r1 (29-april 2010)
process CP788X typical electrical characteristics www.centralsemi.com r1 (29-april 2010) |
Price & Availability of CP788X
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